Share Email Print

Proceedings Paper

Research on the temperature of thin film under ion beam bombarding
Author(s): Yun-Fei Zhao; Shuzi Sun; Shi Jin Pang
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Temperature measurement of thin films under ion beams bombardment has been made by a new method. 100 Kev Ar ion have been used to bombard the Al thin films deposited on Fe8Co39Ni31Si6B16 non-crystal thin straps. Several data of the temperature were obtained indirectly by analyzing the substrate by means of DTA. When the intensity of the ion beams were 5 W/cm2 and 12 W/cm2, the temperatures were 700 K and 806 K. Starting from the conservation of energy in equilibrium state, a theoretical equation has been derived. Chosen reasonable approximation, the theoretical curve of the temperature depending on the ion beam power comparatively conforms the experimental results.

Paper Details

Date Published: 1 November 1991
PDF: 4 pages
Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47334
Show Author Affiliations
Yun-Fei Zhao, Northeast Univ. of Technology (China)
Shuzi Sun, Northeast Univ. of Technology (China)
Shi Jin Pang, Beijing Lab. of Vacuum Physics (China)

Published in SPIE Proceedings Vol. 1519:
International Conference on Thin Film Physics and Applications

© SPIE. Terms of Use
Back to Top