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Proceedings Paper

Growth of rf-sputtered selenium thin films
Author(s): Xiang Long Yuan; Szuk Wei Min; Zhi Yao Fang; Da Wei Yu; Lei Qi
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Paper Abstract

The growth process of selenium thin films deposited by RF sputtering on slide glass was investigated for various substrate temperatures by SEM. Droplet growth was observed at substrate temperature higher than 30 degree(s)C. The droplet density decreased but the size increased with increasing temperature. A thin layer under droplets was obtained that might be caused by secondary electro bombardment and radiation from the plasma and/or the contamination on substrate surface. The effect of substrate temperature on the growth of the thin layer was discussed.

Paper Details

Date Published: 1 November 1991
PDF: 5 pages
Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47330
Show Author Affiliations
Xiang Long Yuan, Shanghai Institute of Ceramics (China)
Szuk Wei Min, Shanghai Institute of Ceramics (China)
Zhi Yao Fang, Shanghai Institute of Ceramics (China)
Da Wei Yu, Shanghai Institute of Ceramics (China)
Lei Qi, Shanghai Research Institute of Chemical Industry (China)

Published in SPIE Proceedings Vol. 1519:
International Conference on Thin Film Physics and Applications

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