Share Email Print

Proceedings Paper

Thermal stabilities of a-Si:H films and its application to thyristor elements
Author(s): Yue Zhen Sun; Chun Xian Chen; Qi Yao Xie; Chen Zhong Yin; Yuliang L. He
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We report on hydrogenate amorphous silicon (a-Si:H) films as unique passivation films for crystal silicon (C-Si) devices used on the thyristor elements. It's shown that a-Si:H passivation films could be used to raise the forward and reverse breakdown voltage over a wide range, as well as to improve the high temperature feature for thyristor elements. There are economic results. The a-Si:H passivation films have a novel ability to attract the impurities from the interface of c-Si device to the a-Si:H films and promote the c-Si devices with high quality. We also discuss the thermal stability of a-Si:H passivation films.

Paper Details

Date Published: 1 November 1991
PDF: 7 pages
Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47328
Show Author Affiliations
Yue Zhen Sun, Shanghai Institute of Testing Technology (China)
Chun Xian Chen, Shanghai Institute of Testing Technology (China)
Qi Yao Xie, Shanghai Institute of Testing Technology (China)
Chen Zhong Yin, Jiangnan Univ. (China)
Yuliang L. He, Nanjing Univ. (China)

Published in SPIE Proceedings Vol. 1519:
International Conference on Thin Film Physics and Applications

© SPIE. Terms of Use
Back to Top