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Effect of growth conditions on epitaxial lateral overgrowth of InP on InP/Si (001) substrate by hydride vapor phase epitaxy
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Paper Details

Date Published: 30 May 2003
PDF: 11 pages
Proc. SPIE 4997, Photonics Packaging and Integration III, (30 May 2003); doi: 10.1117/12.473278
Show Author Affiliations
Yan-Ting Sun, Royal Institute of Technology (Sweden)
Sebastian Lourdudoss, Royal Institute of Technology (Sweden)

Published in SPIE Proceedings Vol. 4997:
Photonics Packaging and Integration III
Randy A. Heyler; David J. Robbins; Ghassan E. Jabbour, Editor(s)

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