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Proceedings Paper

Incorporation of As into HgCdTe grown by MOCVD
Author(s): Jin He; Zhen Zhong Yu; Ke Jun Ma; Pei Min Jia; Jianrong Yang; Shou Zhen Shen; Wei Min Chen; Jimin Yang
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Paper Abstract

This is the first report on the mechanism of As incorporation into MOCVD-grown HgCdTe/CdTe/GaAs films. HgCdTe/CdTe/GaAs wafers have been grown by metalorganic chemical vapor deposition (MOCVD). The atomic absorption spectrometer was utilized to analyze As content in the As-grown HgCdTe epilayers. The integrated GC-MS analytical system was utilized to observe the decomposition products of DMCd and/or DETe at different temperatures in the presence of GaAs. The mechanism of As incorporation into epilayers is presented.

Paper Details

Date Published: 1 November 1991
PDF: 9 pages
Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47327
Show Author Affiliations
Jin He, Shanghai Institute of Technical Physics (China)
Zhen Zhong Yu, Shanghai Institute of Technical Physics (China)
Ke Jun Ma, Shanghai Institute of Technical Physics (China)
Pei Min Jia, Shanghai Institute of Technical Physics (China)
Jianrong Yang, Shanghai Institute of Technical Physics (China)
Shou Zhen Shen, Shanghai Institute of Technical Physics (China)
Wei Min Chen, Shanghai Institute of Technical Physics (China)
Jimin Yang, East China Univ. of Chemical Technology (China)


Published in SPIE Proceedings Vol. 1519:
International Conference on Thin Film Physics and Applications

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