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Proceedings Paper

Determination of thickness and refractal index of HgCdMnTe/CdMnTe VPE films by IR transmission spectrum
Author(s): Wei Min Chen; Ke Jun Ma; Zhen Zhong Yu; Hua Mei Ji
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Paper Abstract

The thickness and refractal index of the diluted magnetic semiconductor (DME) Hg1-x-yCdxMnyTe thin films grown on Cd1-zMnzTe substrate by close-spaced isothermal vapor phase epitaxy (ISOVPE) technique had been determined by the method of fitting the theoretical infrared transmission spectrum to the experimental data. The range of the film thickness was 5 - 30 micrometers and the indexes were around 3.5, depending upon the compositions. The index of Cd1-xMnzTe was also obtained by the combination of mechanical thinning and optical measurements, which changes from 2.71 (z equals 0.1) to 2.88 (z equals 0.6), and compared with those of related II-VI materials, CdTe and HgCdTe. The method was verified by scanning electron microscope data. It is non-destructive, simple, and effective, and can be routinely used in thin film material characterization.

Paper Details

Date Published: 1 November 1991
PDF: 4 pages
Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47323
Show Author Affiliations
Wei Min Chen, Shanghai Institute of Technical Physics (China)
Ke Jun Ma, Shanghai Institute of Technical Physics (China)
Zhen Zhong Yu, Shanghai Institute of Technical Physics (China)
Hua Mei Ji, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 1519:
International Conference on Thin Film Physics and Applications

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