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Proceedings Paper

Optical characterization of Hg1-xCdxTe/CdTe/GaAs multilayers grown by molecular beam epitaxy
Author(s): Weijun Liu; Pulin Liu; Guo Liang Shi; Jing-Bing Zhu; Li He; Qin Xi Xie; Shixin Yuan
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Paper Abstract

The IR transmission spectra for HgCdTe/CdTe/GaAs multilayers grown by molecular-beam epitaxy were measured in the wavenumber region of 600 cm-1 - 4000 cm-1 at 300 K and 77 K. The transmission spectra were calculated taking the thickness d1 of MCT layer and the thickness d2 of CdTe layer as fitting parameters in the energy range from 600 cm-1 to 300 cm-1 below the energy gap Eg assuming the existence of abrupt interfaces between the neighboring layers. The values of d1 and d2 obtained by fitting the IR transmission spectra are in good agreement with that by transmission electron microscopy (TEM) measurement. The accurate absorption coefficient spectra were obtained and discussed in the energy region equivalent to 0.9 Eg to 4000 cm-1 taking into account the interference effects.

Paper Details

Date Published: 1 November 1991
PDF: 8 pages
Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47322
Show Author Affiliations
Weijun Liu, National Lab. for Infrared Physics (China)
Pulin Liu, National Lab. for Infrared Physics (China)
Guo Liang Shi, National Lab. for Infrared Physics (China)
Jing-Bing Zhu, National Lab. for Infrared Physics (China)
Li He, Shanghai Institute of Technical Physics (China)
Qin Xi Xie, Shanghai Institute of Technical Physics (China)
Shixin Yuan, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 1519:
International Conference on Thin Film Physics and Applications

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