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Proceedings Paper

Photoluminescent properties of ZnO epitaxial thin films and single-crystal nanorods
Author(s): Gyu-Chui Yi; Won Il Park; Sug Woo Jung; Sangsu Hong; Taiha Joo
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Paper Abstract

We report on photoluminescence (PL) properties of ZnO epitaxial films and single-crystal nanorods grown by low pressure metalorganic vapor phase epitaxy. Time-integrated PL spectra of the films at 10 K clearly exhibited free A and B excitons at 3.376 and 3.382 eV and bound exciton peaks at 3.360, 3.364, and 3.367 eV. With increasing temperature, intensities of the bound exciton peaks drastically decreased and a free exciton peak was dominant above 40 K. Similarly, vertically well-aligned ZnO nanorod arrays also exhibited free exciton peaks at 3.374 and 3.381 eV, which indicates that ZnO nanorods prepared by the catalyst-fee method are of high optical quality. Furthermore, time-resolved PL measurements at a free exciton peak were carried out at room temperature. The decay profiles were of double-exponential form, and the decay time constants of 180 ps and 1.0 ns were obtained using a least-square fit of the data. Excitation power-dependent PL of ZnO epilayers is also discussed.

Paper Details

Date Published: 30 May 2003
PDF: 8 pages
Proc. SPIE 4992, Ultrafast Phenomena in Semiconductors VII, (30 May 2003); doi: 10.1117/12.473202
Show Author Affiliations
Gyu-Chui Yi, Pohang Univ. of Science and Technology (South Korea)
Won Il Park, Pohang Univ. of Science and Technology (South Korea)
Sug Woo Jung, Pohang Univ. of Science and Technology (South Korea)
Sangsu Hong, Pohang Univ. of Science and Technology (South Korea)
Taiha Joo, Pohang Univ. of Science and Technology (South Korea)

Published in SPIE Proceedings Vol. 4992:
Ultrafast Phenomena in Semiconductors VII
Kong-Thon F. Tsen; Jin-Joo Song; Hongxing Jiang, Editor(s)

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