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Proceedings Paper

New process for improving reverse characteristics of platinum silicide Schottky barrier power diodes
Author(s): Shu-Lan Zhao; Yuan Jing Li; Jia Feng Yu; Ya-Li Yang; Shu Qin Liu; Ya Fu Fan; Xiu Yin Bao; Zheng Qing Li
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Paper Abstract

This paper reports the use of a unique reactive ion etching (RIE) in Schottky barrier power diode manufacture. Reverse electrical characteristics of conventional Schottky barrier diodes are compared with those of the devices fabricated by RIE. It is shown that such devices give better reverse electrical characteristics eliminating the inherent edge effects of metal- semiconductor contacts. It is also shown that the device yield has been raised to 60%, which is much better than that of conventional Schottky diodes.

Paper Details

Date Published: 1 November 1991
PDF: 6 pages
Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47320
Show Author Affiliations
Shu-Lan Zhao, Institute of Semiconductors (China)
Yuan Jing Li, Institute of Semiconductors (China)
Jia Feng Yu, Institute of Semiconductors (China)
Ya-Li Yang, Institute of Semiconductors (China)
Shu Qin Liu, Institute of Semiconductors (China)
Ya Fu Fan, Institute of Semiconductors (China)
Xiu Yin Bao, Institute of Semiconductors (China)
Zheng Qing Li, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 1519:
International Conference on Thin Film Physics and Applications

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