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Proceedings Paper

New deposition system for the preparation of doped a-Si:H
Author(s): Zhaoping Wu; Ru Guang Chen; Yongling Wang
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Paper Abstract

A novel technique, rf sputtering and rf glow discharge (GD) coexistent system, has been developed for the preparation of doped a-Si:H. Dopant, which is sputtered from the target in either powder or solid, is introduced into GD chamber and then deposited onto the substrate in the presence of glow discharge of silane. The relationship between the deposition parameters and film properties is investigated thoroughly. The substrate negative bias favors deposit of high quality a-Si:H. The conductivity measurement reveals that the Fermi level can be moved from 0.75 eV of undoped a-Si:H to 0.19 eV corresponding to high phosphorous doped a-Si:H by increasing sputtering power.

Paper Details

Date Published: 1 November 1991
PDF: 5 pages
Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47319
Show Author Affiliations
Zhaoping Wu, Shanghai Institute of Ceramics (China)
Ru Guang Chen, Shanghai Institute of Ceramics (China)
Yongling Wang, Shanghai Institute of Ceramics (China)

Published in SPIE Proceedings Vol. 1519:
International Conference on Thin Film Physics and Applications

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