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Proceedings Paper

Study of HgCdTe/CdTe interface structure grown by metal-organic chemical vapor deposition
Author(s): Ke Jun Ma; Zhen Zhong Yu; Jian Rong Yanh; Shou Zhen Shen; Jin He; Wei Min Chen; Xiangyun Song
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Paper Abstract

The interface of HgCdTe/CdTe thin film growth by MOCVD were investigated by high resolution electron microscope (HREM). It is shown that there is no monolayer abrupt interface between HgCdTe and CdTe films. The interface of HgCdTe/CdTe contains a lot of small and random distributed disorder regions. The disorder areas can be transformed into order one under long time electron beam irradiation.

Paper Details

Date Published: 1 November 1991
PDF: 5 pages
Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47318
Show Author Affiliations
Ke Jun Ma, Shanghai Institute of Technical Physics (China)
Zhen Zhong Yu, Shanghai Institute of Technical Physics (China)
Jian Rong Yanh, Shanghai Institute of Technical Physics (China)
Shou Zhen Shen, Shanghai Institute of Technical Physics (China)
Jin He, Shanghai Institute of Technical Physics (China)
Wei Min Chen, Shanghai Institute of Technical Physics (China)
Xiangyun Song, Shanghai Institute of Ceramics (China)


Published in SPIE Proceedings Vol. 1519:
International Conference on Thin Film Physics and Applications

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