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Proceedings Paper

Formation of titanium nitride films by Xe+ ion-beam-enhanced deposition in a N2 gas environment
Author(s): Xi Wang; Gen Qing Yang; Xiang Huai Liu; Zhi Hong Zheng; Wei-Shi Huang; Zu Yao Zhou; Shichang Zou
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Paper Abstract

A new method in which electron beam evaporation of titanium and bombardment with 40 keV Xe+ ion beam (Xe+-IBED) were done simultaneously in a N2 gas environment, has been developed to prepared titanium nitride films. It was confirmed that the xenon content in the films is very low and the N to Ti elemental ratios of the films approach unit. The films are mainly composed of TiN polycrystalline. The hardness of the films reaches 2200 kgmm-2, higher than that of films prepared by 40 keV N+-IBED. Moreover, some industrial applications of Xe+-IBED titanium nitride films have been reported.

Paper Details

Date Published: 1 November 1991
PDF: 4 pages
Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47317
Show Author Affiliations
Xi Wang, Shanghai Institute of Metallurgy (China)
Gen Qing Yang, Shanghai Institute of Metallurgy (China)
Xiang Huai Liu, Shanghai Institute of Metallurgy (China)
Zhi Hong Zheng, Shanghai Institute of Metallurgy (China)
Wei-Shi Huang, Shanghai Institute of Metallurgy (China)
Zu Yao Zhou, Shanghai Institute of Metallurgy (China)
Shichang Zou, Shanghai Institute of Metallurgy (China)


Published in SPIE Proceedings Vol. 1519:
International Conference on Thin Film Physics and Applications

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