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Proceedings Paper

Characterization and preparation of high-Tc YBa2Cu3O7-x thin films on Si with conducting indium oxide as a buffer layer
Author(s): Z. J. Zhang; Wei Luo; Y. Y. Zeng; N. P. Yang; Y. M. Cai; X. L. Shen; H. S. Chen; Zhongyi Hua
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Paper Abstract

The superconducting YBCO thin films have been successfully prepared by DC magnetion sputtering on silicon substrates with a metallic conductive oxide In2O3 as a buffer layer. The substrate temperature was kept at about 650 degree(s)C during deposition and a subsequent in-situ annealing in oxygen was performed at 450 degree(s)C. The YBCO film on In2O3/Si exhibits zero resistance at 72 degree(s) K. The interface between Si and In2O3 was tested by Rutherford back scattering (RBS) and the characteristics of the YBCO thin films were also examined by x-ray diffraction (XRD).

Paper Details

Date Published: 1 November 1991
PDF: 3 pages
Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47316
Show Author Affiliations
Z. J. Zhang, Fudan Univ. (China)
Wei Luo, Fudan Univ. (China)
Y. Y. Zeng, Fudan Univ. (China)
N. P. Yang, Fudan Univ. (China)
Y. M. Cai, Fudan Univ. (China)
X. L. Shen, Fudan Univ. (China)
H. S. Chen, Fudan Univ. (China)
Zhongyi Hua, Fudan Univ. (China)


Published in SPIE Proceedings Vol. 1519:
International Conference on Thin Film Physics and Applications

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