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Proceedings Paper

Structural investigations of the (Si1-x,Gex)O2 single-crystal thin films by x-ray photoelectron spectroscopy
Author(s): Svetlana Sorokina; Juriy Dikov
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Paper Abstract

The electron structure of the SiO2-GeO2 single crystal thin films has been investigated by x-ray photoelectron spectroscopy (XPS). The growth of the high-germanium a-quartz was performed under hydrothermal conditions, applying a technique that involves high-alkaline solutions. The quartz crystals with germanium oxide content up to 14 mol% have been obtained for the first time. The XPS experiments were carried out using a photoelectron spectrometer (ES-2401). The XPS data show evidence for high separation of the [SiO4]n and [GeO4]n clusters, because the charged parameters for these atoms are not subjected to mutual excitation to remain close to initial SiO2 and GeO2.

Paper Details

Date Published: 1 November 1991
PDF: 6 pages
Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47304
Show Author Affiliations
Svetlana Sorokina, Institute of Experimental Mineralogy (Russia)
Juriy Dikov, Institute for the Geology of Ore Deposits, Petrography, Mineralogy, and Geochemistry (Russia)


Published in SPIE Proceedings Vol. 1519:
International Conference on Thin Film Physics and Applications

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