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Proceedings Paper

GaN single-crystal films on silicon substrates grown by MOVPE
Author(s): Takao Nagatomo; Ichiro Ochiai; Shigeo Ookoshi; Osamu Omoto
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Paper Abstract

Single crystal films GaN have been grown on (111) silicon substrates by metal organic vapor phase epitaxy (MOVPE) in an ambient hydrogen gas at atmospheric pressure. When the growth conditions of V/III ratio of 700, growth rate of about 4 micrometers /h and growth temperature from 850 to 940 degree(s)C were maintained, good-quality single crystal films were obtained. The crystal structure of the films is a hexagonal and the (0001) plane of GaN is preferentially oriented on (111) silicon substrates. The properties of the films have been studied by the reflection high energy electron diffraction (RHEED) technique, x-ray diffraction, scanning-electron microscope (SEM), electrical and optical measurements, and photoluminescence.

Paper Details

Date Published: 1 November 1991
PDF: 6 pages
Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47299
Show Author Affiliations
Takao Nagatomo, Shibaura Institute of Technology (Japan)
Ichiro Ochiai, Shibaura Institute of Technology (Japan)
Shigeo Ookoshi, Shibaura Institute of Technology (Japan)
Osamu Omoto, Shibaura Institute of Technology (Japan)

Published in SPIE Proceedings Vol. 1519:
International Conference on Thin Film Physics and Applications

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