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Paper Abstract
A novel vapor-liquid-solid epitaxy (VLSE) process has been developed to synthesize high-density semiconductor nanowire arrays. The nanowires generally are single crystalline and have diameters of 10-200 nm and aspect ratios of 10-100. The areal density of the array can be readily approach 1010 cm-2. Results based on Si and ZnO nanowire systems are reported here.
Paper Details
Date Published: 24 June 2002
PDF: 3 pages
Proc. SPIE 4806, Complex Mediums III: Beyond Linear Isotropic Dielectrics, (24 June 2002); doi: 10.1117/12.472986
Published in SPIE Proceedings Vol. 4806:
Complex Mediums III: Beyond Linear Isotropic Dielectrics
Akhlesh Lakhtakia; Graeme Dewar; Martin W. McCall, Editor(s)
PDF: 3 pages
Proc. SPIE 4806, Complex Mediums III: Beyond Linear Isotropic Dielectrics, (24 June 2002); doi: 10.1117/12.472986
Show Author Affiliations
Peidong Yang, Univ. of California/Berkeley (United States)
Published in SPIE Proceedings Vol. 4806:
Complex Mediums III: Beyond Linear Isotropic Dielectrics
Akhlesh Lakhtakia; Graeme Dewar; Martin W. McCall, Editor(s)
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