A novel vapor-liquid-solid epitaxy (VLSE) process has been developed to synthesize high-density semiconductor nanowire arrays. The nanowires generally are single crystalline and have diameters of 10-200 nm and aspect ratios of 10-100. The areal density of the array can be readily approach 10¹⁰ cm^-2. Results based on Si and ZnO nanowire systems are reported here.

Date Published: 24 June 2002
PDF: 3 pages
Proc. SPIE 4806, Complex Mediums III: Beyond Linear Isotropic Dielectrics, (24 June 2002); doi: 10.1117/12.472986

Published in SPIE Proceedings Vol. 4806:
Complex Mediums III: Beyond Linear Isotropic Dielectrics
Akhlesh Lakhtakia; Graeme Dewar; Martin W. McCall, Editor(s)