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Proceedings Paper

Preparation of tin oxide and insulating oxide thin films for multilayered gas sensors
Author(s): Chang Dong Feng; Yasuhiro Shimizu; Makoto Egashira
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Paper Abstract

Crack-free SnO2 and SiO2 films with the controlled thickness up to 1 micrometers have been prepared by the sol-gel spin coating method. Preparation conditions and microstructure of the films are described. Gas sensing elements consisting of single SnO2 thin film and multi-layered SiO2/SnO2 thin films have been prepared using this method. Comparison of sensing properties between single SnO2 thin film and multi-layered thin film sensing elements shows potential advantage for developing selective gas sensors.

Paper Details

Date Published: 1 November 1991
PDF: 6 pages
Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47298
Show Author Affiliations
Chang Dong Feng, Nagasaki Univ. (Japan)
Yasuhiro Shimizu, Nagasaki Univ. (Japan)
Makoto Egashira, Nagasaki Univ. (Japan)

Published in SPIE Proceedings Vol. 1519:
International Conference on Thin Film Physics and Applications

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