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Proceedings Paper

Applications of GaAs grade-period doping superlattice for negative-differential-resistance device
Author(s): Wen-Chau Liu; C. Y. Sun; W. S. Lour; D. F. Guo; Yung-Chun Lee
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Paper Abstract

The characteristics of a GaAs graded-period (delta) -doped superlattice grown by molecular beam epitaxy were studied. It is shown that a novel S-shaped negative differential conductivity (NDC) occurred both at 300 K and 77 K. Besides, a two-state avalanche multiplication process, i.e., a middle quasi-stable region is seen at 77 K. Finally, there is an interesting hysteresis phenomenon due to the trapped holes created by the avalanche multiplications. The significant control voltage ratio, Vs/V(Eta) , of the studied structure introduces a good potential for application on the switching field.

Paper Details

Date Published: 1 November 1991
PDF: 5 pages
Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47295
Show Author Affiliations
Wen-Chau Liu, National Cheng Kung Univ. (Taiwan)
C. Y. Sun, National Cheng Kung Univ. (Taiwan)
W. S. Lour, National Cheng Kung Univ. (Taiwan)
D. F. Guo, National Cheng Kung Univ. (Taiwan)
Yung-Chun Lee, National Cheng Kung Univ. (Taiwan)

Published in SPIE Proceedings Vol. 1519:
International Conference on Thin Film Physics and Applications

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