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Proceedings Paper

Crystallization study of Ag-In-Sb-Te optical recording film
Author(s): Geeta Mongia; Promod K. Bhatnagar
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Paper Abstract

Recently the demand of high speed and high-density optical recording media using direct overwrite scheme is very high. Among some of the potential candidates, AgInSbTe alloy appears to be one of the latest promising materials that has drawn world wide attention. The optical disks of this material with overwrite cyclability of more than 105 times and data rate 22Mbps have been reported for DVD 4.5GB. Results of X-ray diffraction analysis of amorphous and crystalline (AgSbTe)x(In1-ySby)1-x films (x = 0.2, 0.4 and y = 0.7) deposited by thermal evaporation technique are presented here. The difference in crystallization behavior of the crystalline phases formed after 1hr. of thermal annealing at temperature between 200-400°c are studied through X-ray diffraction analysis. The optical band gap of above mentioned amorphous and crystalline films were also calculated from transmittance spectra. It is observed that transmittivity increase by about 20% to give significant contrast between amorphous and crystalline marks. This relative change in transmittivity varies with chemical composition also. The results show that as the annealing temperature is incresed, film becomes more crystalline and with lower value of x, i.e. with x = 0.2 better results are obtained. These results were also confirmed through microstructural analysis of the films, involving surface detail using SEM. It has been observed that grain size depends of the annealing temperature as well as on the composition.

Paper Details

Date Published: 25 June 2002
PDF: 8 pages
Proc. SPIE 4863, Java/Jini Technologies and High-Performance Pervasive Computing, (25 June 2002); doi: 10.1117/12.472936
Show Author Affiliations
Geeta Mongia, Univ. of Delhi (India)
Promod K. Bhatnagar, Univ. of Delhi (India)

Published in SPIE Proceedings Vol. 4863:
Java/Jini Technologies and High-Performance Pervasive Computing
Guang R. Gao; Ken Arnold; Guang R. Gao; Sudipto Ghosh, Editor(s)

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