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Proceedings Paper

SPAT studies of near-surface defects in silicon induced by BF2+ and F++B+ implantation
Author(s): Xiao Qin Li; Chenglu Lin; Shichang Zou; Hui Min Weng; Xue Dian Han
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Paper Abstract

Slow-position annihilation technique (SPAT) has been made on silicon samples implanted with BF2+ and F+ + B+ to study the irradiation defects in the thin surface layer (approximately 700 angstrom). The Doppler broadening of the annihilation (delta) -ray energy spectra measured at a number of different incident-positron energies (0 - 16 keV) was characterized by line-shape parameters 'S.' The difference between the S parameter for implanted silicon and that for unimplanted silicon provided information about the concentration and depth of the defects. The results are identical with that obtained from high resolution Rutherford backscattering and channeling technique. This investigation demonstrates that SPAT is a powerful and sensitive technique for measuring the defects distribution in semiconductors.

Paper Details

Date Published: 1 November 1991
PDF: 4 pages
Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47292
Show Author Affiliations
Xiao Qin Li, Shanghai Institute of Metallurgy (China)
Chenglu Lin, Shanghai Institute of Metallurgy (China)
Shichang Zou, Shanghai Institute of Metallurgy (China)
Hui Min Weng, Univ. of Science and Technology of China (China)
Xue Dian Han, Univ. of Science and Technology of China (China)

Published in SPIE Proceedings Vol. 1519:
International Conference on Thin Film Physics and Applications

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