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Proceedings Paper

Preparation and O+ implantation of Y-Ba-Cu-O superconducting thin films by sputtering and RTA process
Author(s): Xiang Jun Fan; Huai Xi Guo; Chang Zhong Jiang; You Gui Pen; Chang Liu; Zhi Lin Pen; Hong Tao Li
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Paper Abstract

An ion beam sputtering and a magnetron sputtering technique was respectively employed to deposit Y1B2aCu3O7 thin films. After deposition, the films were annealed by three-step rapid thermal annealing (RTA) in flowing oxygen. The zero resistance temperature of the superconducting thin films were achieved above 80 K. X-ray diffraction shows that the sputtered films have a c-axis orientation perpendicular to the film surface like epitaxial film. It is found that the proportion of yttrium was higher than the composition of the thin film within 60A from the surface measured by XPS. The EPMA shows that the proportion of yttrium was considerably decreased by the annealing procedure. 120 Kev O+ has been implanted into Y-Ba-Cu-O as-deposited films. The initial values of resistance were strongly reduced with increasing Oo doses. The resistance vs. temperature curves of implanted films are characterized as a semiconductor with a negative temperature coefficient.

Paper Details

Date Published: 1 November 1991
PDF: 5 pages
Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47288
Show Author Affiliations
Xiang Jun Fan, Wuhan Univ. (China)
Huai Xi Guo, Wuhan Univ. (China)
Chang Zhong Jiang, Wuhan Univ. (China)
You Gui Pen, Wuhan Univ. (China)
Chang Liu, Wuhan Univ. (China)
Zhi Lin Pen, Wuhan Univ. (China)
Hong Tao Li, Wuhan Univ. (China)


Published in SPIE Proceedings Vol. 1519:
International Conference on Thin Film Physics and Applications

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