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Proceedings Paper

ZnS:Mn thin film electroluminescent display devices using hafnium dioxide as insulating layer
Author(s): C. T. Hsu; Jiin Wen Li; C. S. Liu; Yan-Kuin Su; Tong S. Wu; Meiso Yokoyama
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Paper Abstract

The ac thin film EL possesses the properties of high resolution, compact, high brightness, and large area, etc. One of the important subjects is the choice of dielectric materials for use in ACTFEL displays. In this paper we discuss the electrical and optical performances of EL devices with BaTiO3, Ta2O5, Al2O3, and HfO2 as insulating layers. From the results, we find that EL devices with a glass/ITO/BaTiO3/ZnS:Mn/HfO2/Ta2O5/HfO2/Al structure are excellent in brightness and efficiency.

Paper Details

Date Published: 1 November 1991
PDF: 5 pages
Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47283
Show Author Affiliations
C. T. Hsu, National Cheng Kung Univ. (Taiwan)
Jiin Wen Li, National Cheng Kung Univ. (Taiwan)
C. S. Liu, National Cheng Kung Univ. (Taiwan)
Yan-Kuin Su, National Cheng Kung Univ. (Taiwan)
Tong S. Wu, National Cheng Kung Univ. (Taiwan)
Meiso Yokoyama, National Cheng Kung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 1519:
International Conference on Thin Film Physics and Applications

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