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Proceedings Paper

Interaction between the excitons and electrons in ZnSe1-xSx epilayer under high excitation
Author(s): Z. P. Guan; Zhuhong Zheng; J. H. Zhang; Youming Lu; Guang Han Fan; Xiwu Fan
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Paper Abstract

Excitonic properties of ZnSe1-xSx epilayer fabricated on GaAs substrate by a Ap-MOCVD have been investigated. Luminescence, excitation, and time-resolved spectroscopy have been employed to study the interaction between excitons and electrons at 77 and 300 K. Under pulsed N2 laser excitation it is found that the peak shift of the near band edge emission is large, especially at room temperature. This is because the bottoms of the conduction bands are filled at higher temperature and the carriers from the exciton-exciton scattering must occupy higher energy levels. Therefore a shift of the peak toward lower energy is expected.

Paper Details

Date Published: 1 November 1991
PDF: 7 pages
Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47276
Show Author Affiliations
Z. P. Guan, Changchun Institute of Physics (China)
Zhuhong Zheng, Changchun Institute of Physics (China)
J. H. Zhang, Changchun Institute of Physics (China)
Youming Lu, Changchun Institute of Physics (China)
Guang Han Fan, Changchun Institute of Physics (China)
Xiwu Fan, Changchun Institute of Physics (China)


Published in SPIE Proceedings Vol. 1519:
International Conference on Thin Film Physics and Applications

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