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Proceedings Paper

Study of phase transition VO2 thin film
Author(s): Jiancun Gao; Zhi Hong Lin; Liying Han
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Paper Abstract

Vanadium dioxide thin film that has semiconductor-to-metal phase transition has been obtained by either reactive evaporation or reactive ion assisted deposition with subsequent annealing processes. Various kinds of measurement methods have been developed in investigation of phase transition properties of vanadium dioxide films. It is observed that the performance of phase transition properties strongly depends upon the stoichiometric and crystalline characteristics of the thin film.

Paper Details

Date Published: 1 November 1991
PDF: 5 pages
Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47275
Show Author Affiliations
Jiancun Gao, Tsinghua Univ. (China)
Zhi Hong Lin, Tsinghua Univ. (China)
Liying Han, Tsinghua Univ. (China)


Published in SPIE Proceedings Vol. 1519:
International Conference on Thin Film Physics and Applications

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