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Proceedings Paper

Laser-induced phase transition in crystal InSb films as used in optical storage
Author(s): Yang Sun; Cheng Fu Li; He Deng; Fuxi Gan
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Paper Abstract

We have analyzed the transient phase transition process in c-InSb films by the measurement of temporal reflectivity change. The results show that InSb film is a promising medium for optical storage, and the reflectivity change measurement is a useful method to explore the dynamic processes in thin films and the material's surfaces under pulsed laser irradiation.

Paper Details

Date Published: 1 November 1991
PDF: 5 pages
Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47269
Show Author Affiliations
Yang Sun, Shanghai Institute of Optics and Fine Mechanics (China)
Cheng Fu Li, Shanghai Institute of Optics and Fine Mechanics (China)
He Deng, Shanghai Institute of Optics and Fine Mechanics (China)
Fuxi Gan, Shanghai Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 1519:
International Conference on Thin Film Physics and Applications

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