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Proceedings Paper

Crystallization of hydrogenated amorphous silicon film and its fractal structure
Author(s): Hongyi Lin; Daoming Yang; Ying Xue Li
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Paper Abstract

Morphology of fractal structure in hydrogenated amorphous silicon (a-Si:H) films at different annealing temperatures is observed using transmission electron microscope (TEM). The experimental method is an in situ dynamic observation technique. The fractal dimensions are calculated with the Sandbox method. With the annealing temperature at 450 degree(s)C, the fingering-like fractal structures are grown in the films and the fractal dimension is 1.69. At 800 degree(s)C, the fractal dimension is 1.76. The experimental results show the fractal structures in a-Si:H films. The relationship between the fractal structures in a-Si:H films and its crystallization are discussed.

Paper Details

Date Published: 1 November 1991
PDF: 4 pages
Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47264
Show Author Affiliations
Hongyi Lin, Beijing Institute of Technology (China)
Daoming Yang, Beijing Institute of Technology (China)
Ying Xue Li, Peking Univ. (China)

Published in SPIE Proceedings Vol. 1519:
International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang, Editor(s)

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