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Proceedings Paper

Thermal stability and microstructure study of WSi0.6/GaAs by XRD and TEM
Author(s): Shu Yuan Zhang; Shun Tan; Changsui Wang; Te Xiu Zhao
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Paper Abstract

WSix/GaAs is a kind of Schottky gate material which has been successfully applied to prepare various electrical devices. In literature there are reports about electrical properties and thermal stabilities of WSix/GaAs systems. But the results on thermal stability were not coincidence. So far we have not found an article about the WSix/GaAs system investigated by transmission electron microscopy (TEM). The TEM cross-section is the best way to reveal the microstructures of WSix/GaAs system at various annealing conditions. In this work the WSi0.6/GaAs system has been investigated by x-ray diffraction (XRD) and TEM. Some valuable results have been obtained.

Paper Details

Date Published: 1 November 1991
PDF: 4 pages
Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47263
Show Author Affiliations
Shu Yuan Zhang, Univ. of Science and Technology of China (China)
Shun Tan, Univ. of Science and Technology of China (China)
Changsui Wang, Univ. of Science and Technology of China (China)
Te Xiu Zhao, Univ. of Science and Technology of China (China)


Published in SPIE Proceedings Vol. 1519:
International Conference on Thin Film Physics and Applications

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