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Proceedings Paper

Study on the high-field current transport mechanisms in thin SiOxNy films
Author(s): Bing Liang Yang; Bai Yong Liu; D. N. Chen; Y. C. Cheng; HonLeung Kelvin Wong
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Paper Abstract

A new model is proposed to explain the current transport behavior in thin thermally nitrided silicon oxide (SiOxNy) films. In this model it was suggested that there are four mechanisms for the current conduction, namely: a) direct electron injection from the cathode; b) current due to electron capturing of traps; c) re-emission of trapped electron; and d) the hole injection from the Si-substrate. The theoretical results of the new model, including the current enhancement and trapping ledge phenomena in the I-V characteristics of the insulators, agree well with the experiments. The influence of the external applied field and the electron traps on the current transport behaviors in the SiOxNy films were also discussed.

Paper Details

Date Published: 1 November 1991
PDF: 6 pages
Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47257
Show Author Affiliations
Bing Liang Yang, South China Univ. of Technology (China)
Bai Yong Liu, South China Univ. of Technology (China)
D. N. Chen, South China Univ. of Technology (China)
Y. C. Cheng, City Polytechnic of Hong Kong (Hong Kong China)
HonLeung Kelvin Wong, City Polytechnic of Hong Kong (Hong Kong China)


Published in SPIE Proceedings Vol. 1519:
International Conference on Thin Film Physics and Applications

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