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Proceedings Paper

Research on relaxation process of a-Si:H film photoconductivity and the trap effect
Author(s): Dao Ben Gong
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Paper Abstract

By using monochromatic light from the monochromator and super-resistance measurement instrument and function recorder, we measured the relaxation phenomena of the a-Si:H film photoconductivity and obtained some regularities. We propose that the relaxation time ((tau) ) according to exponential changes is mainly affected by minority carrier traps and the effect of majority carrier traps makes the photoconductivity relaxation process deviate from the exponential curve and greatly delays the actual relaxation time. We have not found so far any paper dealing with the different effects of these two types of traps.

Paper Details

Date Published: 1 November 1991
PDF: 6 pages
Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47253
Show Author Affiliations
Dao Ben Gong, South-Central Institute for Nationalities (China)

Published in SPIE Proceedings Vol. 1519:
International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang, Editor(s)

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