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Proceedings Paper

Formation of boron nitride and silicon nitride bilayer films by ion-beam-enhanced deposition
Author(s): Yi Ping Feng; Bing Yao Jiang; Gen Qing Yang; Wei-Shi Huang; Zhi Hong Zheng; Xiang Huai Liu; Shichang Zou
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Paper Abstract

Bilayer thin films of boron nitride and silicon nitride were prepared by sequential electron beam evaporation of Si or B and simultaneous irradiation with nitrogen ions. The composition and structure of the films were investigated by AES and IR analysis.

Paper Details

Date Published: 1 November 1991
PDF: 4 pages
Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47242
Show Author Affiliations
Yi Ping Feng, Shanghai Institute of Metallurgy (China)
Bing Yao Jiang, Shanghai Institute of Metallurgy (China)
Gen Qing Yang, Shanghai Institute of Metallurgy (China)
Wei-Shi Huang, Shanghai Institute of Metallurgy (China)
Zhi Hong Zheng, Shanghai Institute of Metallurgy (China)
Xiang Huai Liu, Shanghai Institute of Metallurgy (China)
Shichang Zou, Shanghai Institute of Metallurgy (China)


Published in SPIE Proceedings Vol. 1519:
International Conference on Thin Film Physics and Applications

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