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Proceedings Paper

Optical transition characteristic energies of amorphous and polycrystalline tin oxide films
Author(s): M. Rasat Muhamad; W. H. A. Majid; Z. Ariffin
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Paper Abstract

Thin films of tin oxide were prepared by room temperature thermal evaporation of blue-black SnO crystal powder synthesized from metallic tin on glass substrate. X-ray diffractograms revealed that the amorphous samples form polycrystals of SnO when annealed at 300 degree(s)C in ambient air for 30 minutes and are oxidized to polycrystals of SnO2 when further annealed at 500 degree(s)C or above. The 2(theta) of the x-ray diffractogram peaks were produced by (101), (110), (211), (200), (112) planes of SnO and (110), (101), (211), (200), (220) planes of SnO2, respectively, as assigned by the ASTM index. Even though the optical energy gap of SnO (2.4 - 2.6 eV), is smaller compare to that of SnO2 (3.0 - 3.2 eV), the average strength of optical transition is highest for SnO polycrystals with a magnitude of 14.0 eV as compared to 10.4 eV for SnO2. The single oscillator strengths are 4.0 and 3.5 eV for polycrystalline SnO and SnO2 respectively. The plasma frequency was determined to be in the range of (6.1 - 11.8) X 1015 Hz and increases with increasing composition of SnO2; this parameter was used to estimate the density of valence electron in this material.

Paper Details

Date Published: 1 November 1991
PDF: 6 pages
Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47241
Show Author Affiliations
M. Rasat Muhamad, Univ. of Malaya (Malaysia)
W. H. A. Majid, Univ. of Malaya (Malaysia)
Z. Ariffin, Univ. of Malaya (Malaysia)

Published in SPIE Proceedings Vol. 1519:
International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang, Editor(s)

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