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Proceedings Paper

Characterization of the near-field profile of semiconductor lasers and the spot size of tightly focused laser beams from far-field measurements
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Paper Abstract

Characterization of the near field of typical semiconductor lasers and the spot size of tightly focused laser beams poses significant challenges to direct near-field profile measurement techniques. Far-field measurements are considerably easier to perform and offer an attractive alternative for this characterization. To assess this alternative, profiles of edge-emitting laser diodes and VCSELs, and the spot size of focused laser beams were determined from far-field and near-field measurements. In the far field, measurements were made using a 3D-scanning goniometric radiometer that provides irradiance profiles with angular extent to approximately ±70°. Indirect measures derived from these data using different methods are reported, including the spot size using the M2 times-diffraction-limited approximation, the Hankel transform Petermann II mode-field diameter used for optical fiber characterization, and a measure obtained from 2D Fourier transform inversion of the far field using phase retrieval. In the near field, direct profile measurements were made using a scanning-slit profiler and a CCD camera with magnifying lenses.

Paper Details

Date Published: 30 May 2003
PDF: 9 pages
Proc. SPIE 4932, Laser-Induced Damage in Optical Materials: 2002 and 7th International Workshop on Laser Beam and Optics Characterization, (30 May 2003); doi: 10.1117/12.472393
Show Author Affiliations
Jeffrey L. Guttman, PHOTON, Inc. (United States)
John M. Fleischer, PHOTON, Inc. (United States)


Published in SPIE Proceedings Vol. 4932:
Laser-Induced Damage in Optical Materials: 2002 and 7th International Workshop on Laser Beam and Optics Characterization
Gregory J. Exarhos; Arthur H. Guenther; Norbert Kaiser; Keith L. Lewis; M. J. Soileau; Christopher J. Stolz; Adolf Giesen; Horst Weber, Editor(s)

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