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Proceedings Paper

Repetition rate dependence of two-photon absorption and self-trapped exciton luminescence in CaF2 at 193 nm
Author(s): Christian Goerling; Uwe Leinhos; Klaus R. Mann
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Paper Abstract

Repetition rate dependent measurements of nonlinear absorptance and self-trapped exciton luminescence (π-luminescence) of high-purity CaF2 crystals irradiated at 193 nm were performed in the range between 25 Hz and 300 Hz. The CaF2 samples showed different two-photon absorption coefficients ("effective" two-photon absorption coefficients βeff), which are attributed to different impurity or defect concentrations inside the crystals. For samples with βeff < 4 x 10-9 cm/W no dependence on repetition rate could be observed, while samples with higher βeff (⩾ 5 x 10-9 cm/W) reveal a strong nonlinear increase of βeff for increasing repetition rates. In contrast, the intensity of self-trapped exciton luminescence was nearly the same for all samples and repetition rates. A simple model for this behavior was developed, including the formation of long-living transient absorbing states, which contribute additionally to the two-photon absorption.

Paper Details

Date Published: 30 May 2003
PDF: 7 pages
Proc. SPIE 4932, Laser-Induced Damage in Optical Materials: 2002 and 7th International Workshop on Laser Beam and Optics Characterization, (30 May 2003); doi: 10.1117/12.472376
Show Author Affiliations
Christian Goerling, Laser-Lab. Goettingen e.V. (Germany)
Uwe Leinhos, Laser-Lab. Goettingen e.V. (Germany)
Klaus R. Mann, Laser-Lab. Goettingen e.V. (Germany)


Published in SPIE Proceedings Vol. 4932:
Laser-Induced Damage in Optical Materials: 2002 and 7th International Workshop on Laser Beam and Optics Characterization
Gregory J. Exarhos; Arthur H. Guenther; Norbert Kaiser; Keith L. Lewis; M. J. Soileau; Christopher J. Stolz; Adolf Giesen; Horst Weber, Editor(s)

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