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Proceedings Paper

Defect printability analysis on electron projection lithography with diamond stencil reticle
Author(s): Yoichi Tomo; Yoshinori Kojima; Sumito Shimizu; Manabu Watanabe; Hiroshi Takenaka; Hiroshi Yamashita; Teruo Iwasaki; Kimitoshi Takahashi; Masaki Yamabe
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Paper Abstract

Mask defect printability of electron projection lithography (EPL) by using a diamond reticle with programmed defect pattern was investigated. Th reticle was obtained from NTT- AT and wafer exposure was performed by Nikon's EB projection experimental column. In general, the printability of the defects of 'dot' categories are lower than 'shift' categories and the allowable defect size of 'dot' categories in 70 nm node are larger than 100 nm on mask with +/- 10 percent critical dimension (CD) tolerance criteria except edge extension defect. On the other hand, the printability of the defects of 'shift' categories is higher than 'dot' categories. According to the defects CD dat of mask and resist patterns, CD error or placement error caused by the defects of 'shift' categories show a linear correlation between the defect size of mask x reduction ratio and printed defect size of resist pattern. SO the allowable defect size of 'shift' categories in 70 nm node should be less than 28 nm on mask.

Paper Details

Date Published: 1 July 2002
PDF: 12 pages
Proc. SPIE 4688, Emerging Lithographic Technologies VI, (1 July 2002); doi: 10.1117/12.472351
Show Author Affiliations
Yoichi Tomo, Semiconductor Leading Edge Technologies, Inc. (Japan)
Yoshinori Kojima, Fujitsu Ltd. (Japan)
Sumito Shimizu, Nikon Corp. (Japan)
Manabu Watanabe, Semiconductor Leading Edge Technologies, Inc. (Japan)
Hiroshi Takenaka, Semiconductor Leading Edge Technologies, Inc. (Japan)
Hiroshi Yamashita, Semiconductor Leading Edge Technologies, Inc. (Japan)
Teruo Iwasaki, Semiconductor Leading Edge Technologies, Inc. (Japan)
Kimitoshi Takahashi, Semiconductor Leading Edge Technologies, Inc. (Japan)
Masaki Yamabe, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 4688:
Emerging Lithographic Technologies VI
Roxann L. Engelstad, Editor(s)

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