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Proceedings Paper

Simulation model of in-plane distortion in EUVL mask during chucking
Author(s): Akira Chiba; Kazuya Ota; Eiichi Hoshino; Minoru Sugawara; Taro Ogawa; Shinji Okazaki
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Paper Abstract

The in-plane distortion (IPD) arising from the stress in the films on an EUVL mask in a flattened state was calculated using a newly devised simulation model based on 2D planar stress theory. One cause of IPD is the stress gradients in the multilayer and absorber films. Since there is no stress gradient in a large absorber pattern with uniform internal stress, the placement error was found to be extremely small in this case. Furthermore, concave or convex regions occur int the free space areas not covered with absorber film. The magnitude of the change in surface height in the detph-wise direction is 0.4 nm for an absorber stress of +/- 500 Mpa. It was found that the change in surface height could be suppressed by reducing the absorber stress. In order to improve the placement accuracy of EUVL masks, it is desirable to deposit films with a uniform internal stress during mask fabrication.

Paper Details

Date Published: 1 July 2002
PDF: 10 pages
Proc. SPIE 4688, Emerging Lithographic Technologies VI, (1 July 2002); doi: 10.1117/12.472348
Show Author Affiliations
Akira Chiba, Association of Super-Advanced Electronics Technologies (Japan)
Kazuya Ota, Association of Super-Advanced Electronics Technologies (Japan)
Eiichi Hoshino, Association of Super-Advanced Electronics Technologies (Japan)
Minoru Sugawara, Association of Super-Advanced Electronics Technologies (Japan)
Taro Ogawa, Association of Super-Advanced Electronics Technologies (Japan)
Shinji Okazaki, Association of Super-Advanced Electronics Technologies (Japan)


Published in SPIE Proceedings Vol. 4688:
Emerging Lithographic Technologies VI
Roxann L. Engelstad, Editor(s)

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