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Proceedings Paper

Fabrication of Mo/Si multilayer for EUVL reticle blank using ion beam sputtering
Author(s): Hiromasa Yamanashi; Taro Ogawa; Hiromasa Hoko; Byoung Taek Lee; Eiichi Hoshino; Masashi Takahashi; Takashi Yoneda; Shinji Okazaki
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Paper Abstract

Multilayer deposition is one of the key technologies for the fabrication of reticle blanks for extreme ultraviolet lithography (EUVL). Molybdenum/silicon (Mo/Si) multilayers deposited on mask blanks must have a high reflectance and a low defect density. To achieve this, ASET has developed a deposition system that employs ion beam sputtering (IBS). This paper presents some preliminary experimental results, such as the EUV reflectance and defect density of Mo/Si multilayers deposited with this system.

Paper Details

Date Published: 1 July 2002
PDF: 6 pages
Proc. SPIE 4688, Emerging Lithographic Technologies VI, (1 July 2002); doi: 10.1117/12.472345
Show Author Affiliations
Hiromasa Yamanashi, Association of Super-Advanced Electronics Technologies (Japan)
Taro Ogawa, Association of Super-Advanced Electronics Technologies (Japan)
Hiromasa Hoko, Association of Super-Advanced Electronics Technologies (Japan)
Byoung Taek Lee, Association of Super-Advanced Electronics Technologies (Japan)
Eiichi Hoshino, Association of Super-Advanced Electronics Technologies (Japan)
Masashi Takahashi, Association of Super-Advanced Electronics Technologies (Japan)
Takashi Yoneda, Association of Super-Advanced Electronics Technologies (Japan)
Shinji Okazaki, Association of Super-Advanced Electronics Technologies (Japan)


Published in SPIE Proceedings Vol. 4688:
Emerging Lithographic Technologies VI
Roxann L. Engelstad, Editor(s)

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