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Proceedings Paper

Large-field ion optics for projection and proximity printing and for maskless lithography (ML2)
Author(s): Hans Loeschner; Gerhard Stengl; Herbert Buschbeck; A. Chalupka; Gertraud Lammer; Elmar Platzgummer; Herbert Vonach; Patrick W.H. de Jager; Rainer Kaesmaier; Albrecht Ehrmann; Stefan Hirscher; Andreas Wolter; Andreas Dietzel; Ruediger Berger; Hubert Grimm; Bruce D. Terris; Wilhelm H. Bruenger; Dieter Adam; Michael Boehm; Hans Eichhorn; Reinhard Springer; Joerg Butschke; Florian Letzkus; Paul Ruchhoeft; John Charles Wolfe
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Paper Abstract

Recent studies carried out with Infineon Technologies have shown the utility of Ion Projection Lithography (IPL) for the manufacturing of integrated circuits. In cooperation with IBM Storage Technology Division the patterning of magnetic films by resist-less Ion Projection Direct Structuring (IPDS) has been demonstrated. With masked ion beam proximity techniques unique capabilities for lithography on non-planar (curved) surfaces are outlined. Designs are presented for a masked ion beam proximity lithography (MIBPL) exposure tool with sub - 20 nm resolution capability within 88 mmo exposure fields. The possibility of extremely high reduction ratios (200:1) for high-volume ion projection mask-less lithography (IP-ML2) is discussed.

Paper Details

Date Published: 1 July 2002
PDF: 12 pages
Proc. SPIE 4688, Emerging Lithographic Technologies VI, (1 July 2002); doi: 10.1117/12.472336
Show Author Affiliations
Hans Loeschner, Ionen Mikrofabrikations Systeme GmbH (Austria)
Gerhard Stengl, Ionen Mikrofabrikations Systeme GmbH (Austria)
Herbert Buschbeck, Ionen Mikrofabrikations Systeme GmbH (Austria)
A. Chalupka, Ionen Mikrofabrikations Systeme GmbH (Austria)
Gertraud Lammer, Ionen Mikrofabrikations Systeme GmbH (Austria)
Elmar Platzgummer, Ionen Mikrofabrikations Systeme GmbH (Austria)
Herbert Vonach, Ionen Mikrofabrikations Systeme GmbH (Austria)
Patrick W.H. de Jager, TNO/Institute of Applied Physics (Netherlands)
Rainer Kaesmaier, Infineon Technologies AG (Germany)
Albrecht Ehrmann, Infineon Technologies AG (Germany)
Stefan Hirscher, Infineon Technologies AG (Germany)
Andreas Wolter, Infineon Technologies AG (Germany)
Andreas Dietzel, IBM Storage Technology Div. (Germany)
Ruediger Berger, IBM Storage Technology Div. (Germany)
Hubert Grimm, IBM Storage Technology Div. (Germany)
Bruce D. Terris, IBM Almaden Research Ctr. (United States)
Wilhelm H. Bruenger, Fraunhofer Institute for Silicon Technology (Germany)
Dieter Adam, Leica Microsystems Lithography GmbH (Germany)
Michael Boehm, Leica Microsystems Lithography GmbH (Germany)
Hans Eichhorn, Leica Microsystems Lithography GmbH (Germany)
Reinhard Springer, Institut fuer Mikroelektronik Stuttgart (Germany)
Joerg Butschke, Institut fuer Mikroelektronik Stuttgart (Germany)
Florian Letzkus, Institut fuer Mikroelektronik Stuttgart (Germany)
Paul Ruchhoeft, Univ. of Houston (United States)
John Charles Wolfe, Univ. of Houston (United States)


Published in SPIE Proceedings Vol. 4688:
Emerging Lithographic Technologies VI
Roxann L. Engelstad, Editor(s)

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