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Proceedings Paper

Investigation of defects in HgCdTe epi-films grown from Te solutions
Author(s): Yue Wang; Zhi Jie Tang; Wei Sha Zhuang; Jing Fu He
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Paper Abstract

The defects on MCT epi-films grown from Te Solutions using liquid phase epitaxy method have been investigated by Metaloscope, x-ray diffraction meter, and electronic scanning microscopes. The observation results show that the defects in MCT epi-films, such as dislocation, twin, sub-grain, and boundary, have damaged the crystal-film's lattice structure and led to poor crystal perfection; the stress existed in the film has caused the lattice to deform and further widened the double crystal rocking curve of the film. It has been found that these defects in the MCT films are almost corresponding to that of CdTe substrates; LPE growth procedure and condition can also affect the quality of MCT films.

Paper Details

Date Published: 1 November 1991
PDF: 6 pages
Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47233
Show Author Affiliations
Yue Wang, Kunming Institute of Physics (China)
Zhi Jie Tang, Kunming Institute of Physics (China)
Wei Sha Zhuang, Kunming Institute of Physics (China)
Jing Fu He, Kunming Institute of Physics (China)


Published in SPIE Proceedings Vol. 1519:
International Conference on Thin Film Physics and Applications

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