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Proceedings Paper

Performance upgrades in the EUV engineering test stand
Author(s): Daniel A. Tichenor; William C. Replogle; Sang Hun Lee; William P. Ballard; Alvin H. Leung; Glenn D. Kubiak; Leonard E. Klebanoff; Samual Graham; John E. M. Goldsmith; Karen L. Jefferson; John B. Wronosky; Tony G. Smith; Terry A. Johnson; Harry Shields; Layton C. Hale; Henry N. Chapman; John S. Taylor; Donald W. Sweeney; James A. Folta; Gary E. Sommargren; Kenneth A. Goldberg; Patrick P. Naulleau; David T. Attwood; Eric M. Gullikson
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Paper Abstract

The EUV Engineering Test Stand (ETS) has demonstrated the printing of 100-nm-resolution scanned images. This milestone was first achieved while the ETS operated in an initial configuration using a low power laser and a developmental projection system, PO Box 1. The drive laser has ben upgraded to a single chain of the three-chain Nd:YAG laser developed by TRW. The result in exposure time is approximately 4 seconds for static exposures. One hundred nanometer dense features have been printed in step-and-scan operation with the same image quality obtained in static printing. These experiments are the first steps toward achieving operation using all three laser chains for a total drive laser power of 1500 watts. In a second major upgrade the developmental wafer stage platen, used to demonstrate initial full-field imaging, has been replaced with the final low-expansion platen made of Zerodur. Additional improvements in the hardware and control software have demonstrated combined x and jitter from 2 to 4 nm RMS Over most of the wafer stage travel range, while scanning at the design scan speed of 10 mm/s at the wafer. This value, less than half of the originally specified jitter, provides sufficient stability to support printing of 70 nm features as planned, when the upgraded projection system is installed. The third major upgrade will replace PO Box 1 with an improved projection system, PO Box 2, having lower figure error and lower flare. In addition to these upgrades, dose sensors at the reticle and wafer planes and an EUV- sensitive aerial image monitor have been integrated into the ETS. This paper reports on ETS system upgrades and the impact on system performance.

Paper Details

Date Published: 1 July 2002
PDF: 15 pages
Proc. SPIE 4688, Emerging Lithographic Technologies VI, (1 July 2002); doi: 10.1117/12.472328
Show Author Affiliations
Daniel A. Tichenor, Sandia National Labs. (United States)
William C. Replogle, Sandia National Labs. (United States)
Sang Hun Lee, Intel Corp. (United States)
William P. Ballard, Sandia National Labs. (United States)
Alvin H. Leung, Sandia National Labs. (United States)
Glenn D. Kubiak, Sandia National Labs. (United States)
Leonard E. Klebanoff, Sandia National Labs. (United States)
Samual Graham, Sandia National Labs. (United States)
John E. M. Goldsmith, Sandia National Labs. (United States)
Karen L. Jefferson, Sandia National Labs. (United States)
John B. Wronosky, Sandia National Labs. (United States)
Tony G. Smith, Sandia National Labs. (United States)
Terry A. Johnson, Sandia National Labs. (United States)
Harry Shields, TRW Space & Electronics Group (United States)
Layton C. Hale, Lawrence Livermore National Lab. (United States)
Henry N. Chapman, Lawrence Livermore National Lab. (United States)
John S. Taylor, Lawrence Livermore National Lab. (United States)
Donald W. Sweeney, Lawrence Livermore National Lab. (United States)
James A. Folta, Lawrence Livermore National Lab. (United States)
Gary E. Sommargren, Lawrence Livermore National Lab. (United States)
Kenneth A. Goldberg, Lawrence Berkeley National Lab. (United States)
Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States)
David T. Attwood, Lawrence Berkeley National Lab. (United States)
Eric M. Gullikson, Lawrence Berkeley National Lab. (United States)

Published in SPIE Proceedings Vol. 4688:
Emerging Lithographic Technologies VI
Roxann L. Engelstad, Editor(s)

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