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Proceedings Paper

Pattern printability for off-axis incident light in EUV lithography
Author(s): Minoru Sugawara; Masaaki Ito; Taro Ogawa; Eiichi Hoshino; Akira Chiba; Shinji Okazaki
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Paper Abstract

Off-axis incident light produces shadowing and an imbalance in the diffracted light. Shadowing causes a change in the critical dimension (CD) and a shift in the position of patterns due to the swing + bulk effect of the absorber and buffer layers. In addition, the imbalance in the diffracted light influences the optical proximity-effect correction (OPC) of actual patterns with a k1 below 0.6. In this study, the main factors influencing OPC were investigated. These include asymmetric aberrations and optical proximity effects (OPE) in line patterns. OPC was then applied to a T-shaped pattern. It is found that the mask error factor (MEF) in low-contrast regions of a layout is an important consideration in OPC.

Paper Details

Date Published: 1 July 2002
PDF: 12 pages
Proc. SPIE 4688, Emerging Lithographic Technologies VI, (1 July 2002); doi: 10.1117/12.472301
Show Author Affiliations
Minoru Sugawara, Association of Super-Advanced Electronics Technologies (Japan)
Masaaki Ito, Association of Super-Advanced Electronics Technologies (Japan)
Taro Ogawa, Association of Super-Advanced Electronics Technologies (Japan)
Eiichi Hoshino, Association of Super-Advanced Electronics Technologies (Japan)
Akira Chiba, Association of Super-Advanced Electronics Technologies (Japan)
Shinji Okazaki, Association of Super-Advanced Electronics Technologies (Japan)


Published in SPIE Proceedings Vol. 4688:
Emerging Lithographic Technologies VI
Roxann L. Engelstad, Editor(s)

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