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Proceedings Paper

Three-dimensional metrology in MEMS applications
Author(s): Alexander Friz; Keith Frank Best; Satinderpall Pannu; Jocelyn T. Nee
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Paper Abstract

ASML-Special Applications has shown its ability to align and quantify overlay in thick films to address alignment and metrology challenges in the Micro-Electromechanical Systems (MEMS) field. These methods apply to any thick film material layers > 5 micrometers . In these thick film scenarios, the issue that arises is the overlay quantification between the upper layer lithography and the bottom layer lithography. In this situation, one quickly approaches the limit of box-in-box metrology. ASML's ability to align to deeply recessed marks overcomes this problem. In addition, the use of ASML's two-point global alignment scheme simplifies wafer processing to reveal covered marks on the bottom surface for further alignment as compared to multiple points in EGA-style alignment systems. The capability to not only align but also to quantify overlay over such a large 'Z' range is an ability that can help to empower the MEMS industry to design and manufacture products that were previously not possible. We address MEMS metrology issues by using the on-board metrology system of an ASML stepper.

Paper Details

Date Published: 1 July 2002
PDF: 9 pages
Proc. SPIE 4688, Emerging Lithographic Technologies VI, (1 July 2002); doi: 10.1117/12.472299
Show Author Affiliations
Alexander Friz, ASML (United States)
Keith Frank Best, ASML (United States)
Satinderpall Pannu, Onix Microsystems (United States)
Jocelyn T. Nee, Onix Microsystems (United States)

Published in SPIE Proceedings Vol. 4688:
Emerging Lithographic Technologies VI
Roxann L. Engelstad, Editor(s)

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