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Proceedings Paper

Predicting overlay performance for electron projection lithography masks
Author(s): Phillip L. Reu; Cheng-Fu Chen; Roxann L. Engelstad; Edward G. Lovell; Michael J. Lercel; Obert R. Wood II; R. Scott Mackay
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Paper Abstract

Minimizing mask-level distortions is critical to the success of Electron Projection Lithography (EPL) in the sub-100 nm regime. A number of possibilities exist to reduce mask fabrication and pattern transfer distortion including subfield correction, 'dummy' patterns, pattern splitting and film stress control. Finite element modeling was used to illustrate the advantages and capabilities of these correction schemes for a 100-mm stencil mask with 1 mm X 1 mm membrane windows. SRAM-type circuit features including both the interconnect and contact levels were used to simulate realistic circuit layouts with both cross-mask and intra-membrane pattern density gradients. With such correction techniques, it is possible to reduce the EPL mask-level distortions for 'worst-case' mixed pattern types to less than 1.0 nm.

Paper Details

Date Published: 1 July 2002
PDF: 12 pages
Proc. SPIE 4688, Emerging Lithographic Technologies VI, (1 July 2002); doi: 10.1117/12.472280
Show Author Affiliations
Phillip L. Reu, Univ. of Wisconsin/Madison (United States)
Cheng-Fu Chen, Univ. of Wisconsin/Madison (United States)
Roxann L. Engelstad, Univ. of Wisconsin/Madison (United States)
Edward G. Lovell, Univ. of Wisconsin/Madison (United States)
Michael J. Lercel, IBM Microelectronics Div. (United States)
Obert R. Wood II, International SEMATECH (United States)
R. Scott Mackay, International SEMATECH (United States)

Published in SPIE Proceedings Vol. 4688:
Emerging Lithographic Technologies VI
Roxann L. Engelstad, Editor(s)

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