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Proceedings Paper

Vendor capability for low-thermal-expansion mask substrates for EUV lithography
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Paper Abstract

Development of manufacturing infrastructure is required to ensure a commercial source of mask substrates for the timely introduction of EUVL. Improvements to the low thermal expansion materials that compose the substrate have been made, but need to be scaled to production quantities. We have been evaluating three challenging substrate characteristics to determine the state of the infrastructure for the finishing of substrates. First, surface roughness is on track and little risk is associated with achieving the roughness requirement as an independent specification. Second, with new flatness-measuring equipment just coming on line, the vendors are poised for improvement toward the SEMI P37 flatness specification. Third, significant acceleration is needed in the reduction of defect levels on substrates. The lack of high-sensitivity defect metrology at the vendors' sites is limiting progress in developing substrates for EUVL.

Paper Details

Date Published: 1 July 2002
PDF: 12 pages
Proc. SPIE 4688, Emerging Lithographic Technologies VI, (1 July 2002); doi: 10.1117/12.472273
Show Author Affiliations
Kenneth L. Blaedel, Lawrence Livermore National Lab. (United States)
John S. Taylor, Lawrence Livermore National Lab. (United States)
Scott Daniel Hector, Motorola (United States)
Pei-yang Yan, Intel Corp. (United States)
Arun Ramamoorthy, Intel Corp. (United States)
Peter D. Brooker, International SEMATECH (United States)

Published in SPIE Proceedings Vol. 4688:
Emerging Lithographic Technologies VI
Roxann L. Engelstad, Editor(s)

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