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Proceedings Paper

Fine pattern replication on 10 x 10-mm exposure area using ETS-1 laboratory tool in HIT
Author(s): K. Hamamoto; Takeo Watanabe; Hideo Hada; Hiroshi Komano; Shinji Kishimura; Shinji Okazaki; Hiroo Kinoshita
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Paper Abstract

Utilizing ETS-1 laboratory tool in Himeji Institute of Technology (HIT), as for the fine pattern replicated by using the Cr mask in static exposure, it is replicated in the exposure area of 10 mm by 2 mm in size that the line and space pattern width of 60 nm, the isolated line pattern width of 40 nm, and hole pattern width of 150 nm. According to the synchronous scanning of the mass and wafer with EUVL laboratory tool with reduction optical system which consisted of three-aspherical-mirror in the NewSUBARU facilities succeeded in the line of 60 nm and the space pattern formation in the exposure region of 10mm by 10mm. From the result of exposure characteristics for positive- tone resist for KrF and EB, KrF chemically amplified resist has better characteristics than EB chemically amplified resist.

Paper Details

Date Published: 1 July 2002
PDF: 8 pages
Proc. SPIE 4688, Emerging Lithographic Technologies VI, (1 July 2002); doi: 10.1117/12.472272
Show Author Affiliations
K. Hamamoto, Himeji Institute of Technology (Japan)
Takeo Watanabe, Himeji Institute of Technology (Japan)
Hideo Hada, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Hiroshi Komano, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Shinji Kishimura, Matsushita Electric Industrial Co., Ltd. (Japan)
Shinji Okazaki, Association of Super-Advanced Electronics Technologies (Japan)
Hiroo Kinoshita, Himeji Institute of Technology (Japan)

Published in SPIE Proceedings Vol. 4688:
Emerging Lithographic Technologies VI
Roxann L. Engelstad, Editor(s)

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