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Proceedings Paper

Optical and electrical properties of Al-Al2O3-Cu tunnel junctions
Author(s): Q. Q. Shu; X. M. Tian; X. Y. Chen; C. Z. Cai; K. Q. Zheng; W. G. Ma
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Paper Abstract

Compared with Al-Al2O3-Au tunnel junctions, light emission output and I-V characteristics of Al-Al2O3-Cu tunnel junctions have been studied. The junctions with Cu films of 500 angstrom can be biased up to 2.9 eV at room temperature, and the light emission efficiencies were in the 10-6 range. The I-V curves have been measured at 77 K. Based on the dispersion curves of surface plasmon polariton at the interfaces and the barrier parameters of the junctions, a discussion of the results is given.

Paper Details

Date Published: 1 November 1991
PDF: 5 pages
Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47226
Show Author Affiliations
Q. Q. Shu, Chongqing Univ. (China)
X. M. Tian, Chongqing Univ. (China)
X. Y. Chen, Chongqing Univ. (China)
C. Z. Cai, Chongqing Univ. (China)
K. Q. Zheng, Chongqing Univ. (China)
W. G. Ma, Univ. of Science and Technology of China (China)

Published in SPIE Proceedings Vol. 1519:
International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang, Editor(s)

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