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Proceedings Paper

Electrical resistance-strain characteristics and structure of amorphous Ni-Si-B thin films
Author(s): Xian-an Cheng; Qi Hua Gu; Bing-yu Chen
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Paper Abstract

The strain coefficient y and temperature coefficient of electrical resistance (TCR) and resistance stability of amorphous alloy Ni-Si-B films have been measured. These characteristics are related to the thickness of the film. The structure of the films have been examined by electron microscope. The results are discussed on the basis of microscopic columnar structure model of amorphous thin film and the Meiksin's Theory for effect of elastic strain on the electrical resistance of thin metal film.

Paper Details

Date Published: 1 November 1991
PDF: 4 pages
Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47225
Show Author Affiliations
Xian-an Cheng, Beijing Univ. of Aeronautics and Astronautics (China)
Qi Hua Gu, Beijing Univ. of Aeronautics and Astronautics (China)
Bing-yu Chen, Beijing Univ. of Aeronautics and Astronautics (China)


Published in SPIE Proceedings Vol. 1519:
International Conference on Thin Film Physics and Applications

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