Share Email Print
cover

Proceedings Paper

Recording and erasing characteristics of GeSbTe-based phase change thin films
Author(s): Lisong Hou; Chuanxing Zhu; Donghong Gu
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

GeSbTe-based thin films are prepared by both evaporation and sputtering methods. By the optimization of the film thickness the erasing (crystallization) time of some films is less than 100 ns and the contrast can be as high as 25%. Both the amorphous and the crystalline states of the unprotected films are stable up to 104 writing/erasing cycles. The employment of a fourth element significantly improves the cycling stability up to 105 times.

Paper Details

Date Published: 1 November 1991
PDF: 6 pages
Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47216
Show Author Affiliations
Lisong Hou, Shanghai Institute of Optics and Fine Mechanics (China)
Chuanxing Zhu, Shanghai Institute of Optics and Fine Mechanics (China)
Donghong Gu, Shanghai Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 1519:
International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang, Editor(s)

© SPIE. Terms of Use
Back to Top