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Proceedings Paper

Ultrashort pulse damage of Si and Ge semiconductors
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Paper Abstract

An experimental and theoretical investigation of ultrashort pulse damage thresholds of Si and Ge semiconductors has been carried out. As the source of laser radiation, a commercial sub picosecond Ti:Sapphire laser system has been used. It produces laser pulses of 0.5 mJ pulse energy at 1 kHz repetition rate, providing a Gaussian-like beam profile. Compressor tuning allowed for varying the pulse duration from 150 fs to 5.5 ps. The laser damage thresholds were measured in air and for this pulse duration range. The damage morphologies were investigated with various microscopic inspection techniques like Nomarski DIC, atomic force and white light interference microscopy.

Paper Details

Date Published: 30 May 2003
PDF: 8 pages
Proc. SPIE 4932, Laser-Induced Damage in Optical Materials: 2002 and 7th International Workshop on Laser Beam and Optics Characterization, (30 May 2003); doi: 10.1117/12.472053
Show Author Affiliations
Paul Allenspacher, DLR (Germany)
Bernd Huettner, DLR (Germany)
Wolfgang Riede, DLR (Germany)


Published in SPIE Proceedings Vol. 4932:
Laser-Induced Damage in Optical Materials: 2002 and 7th International Workshop on Laser Beam and Optics Characterization
Gregory J. Exarhos; Arthur H. Guenther; Norbert Kaiser; Keith L. Lewis; M. J. Soileau; Christopher J. Stolz; Adolf Giesen; Horst Weber, Editor(s)

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