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Proceedings Paper

Boron depth profiles in a-Si1-xCx:H(B) films after thermal annealing
Author(s): Changgeng Liao; Zhi Hao Zheng; Yong Qiang Wang; Sheng Sheng Yang
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Paper Abstract

B-doped hydrogenated amorphous silicon-carbon [a-Si C:H(B)] film is an important photovoltaic material owing to its wide band gap. During the past years it has attracted much attention and has been used in some devices such as solar cells. At present, however, there have been few reports of detailed results about the thermal stability of a-Si1-xCx:H(B) films. Therefore, the determination of boron depth profiles in these films after thermal annealing and related properties are of interest. In this report, the measurements of B depth profiles in p-layer of a-Si:H/a-Si1-xCx:H(B)/a-Si:H films after thermal annealing at various temperatures Ta were carried out by using B(p,(alpha) )8 Be resonant reaction at Ep equals 163 keV. The distribution shapes of boron concentration in these films and some characteristics are presented.

Paper Details

Date Published: 1 November 1991
PDF: 4 pages
Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47205
Show Author Affiliations
Changgeng Liao, Lanzhou Univ. (China)
Zhi Hao Zheng, Lanzhou Univ. (China)
Yong Qiang Wang, Lanzhou Univ. (China)
Sheng Sheng Yang, Lanzhou Univ. (China)


Published in SPIE Proceedings Vol. 1519:
International Conference on Thin Film Physics and Applications

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