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Proceedings Paper

Effect of parameter variation on the performance of InGaAsP/InP multiple-quantum-well electroabsorption/electrorefraction modulators
Author(s): Feike Xiong; Long D. Zhu; C. M. Wang
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Paper Abstract

The dependence of electroabsorption and electrorefraction in InGaAs/InP multiple-quantum- well (MQW) structures on the MQW parameter (as P mole fraction y, well thickness Lz, residual impurity concentration Ndj in i region, and interface quality) and on the applied electric field is investigated theoretically. The relationship between the performance of a MQW long-wavelength phase modulator and electro-refraction is also investigated. Our theoretical study shows that the In1-xGaxAsyP1-y/InP MQW structure with y equals 0.9, Lz equals 100 angstrom is appropriate for a intensity modulator and the structure with y equals 0.87, Lz equals 140 angstrom is suitable for a phase modulator. High interface quality and low i region residual impurity concentration are in favor of the fast and efficient MQW modulators.

Paper Details

Date Published: 1 November 1991
PDF: 5 pages
Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47200
Show Author Affiliations
Feike Xiong, Institute of Semiconductors (China)
Long D. Zhu, Institute of Semiconductors (China)
C. M. Wang, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 1519:
International Conference on Thin Film Physics and Applications

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